Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-08-28
2007-08-28
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S043000, C257S632000, C257SE21170, C257SE21304, C257SE21174, C257SE21006
Reexamination Certificate
active
11192761
ABSTRACT:
A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.
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patent: 6885074 (2005-04-01), Durlam et al.
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patent: 7049234 (2006-05-01), Cheng et al.
Cheng Chin-Chang
Dubin Valery M.
Blakely , Sokoloff, Taylor & Zafman LLP
Nhu David
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