Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-07-14
1997-07-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257184, 257201, 257441, 257443, H01L 3100
Patent
active
056506350
ABSTRACT:
The subject invention comprises a plurality of serially connected small volume photovoltaic devices. A single device includes a first layer of n.sup.+ doped InSb, a second layer of doped IDAs.sub.1-x Sb.sub.x and a third layer of p.sup.+ doped InSb. From 2-50 of these devices are grown by either a low-pressure MOCVD or MBE process to a maximum thickness of about 10 .mu.m. Alternatively, the first layer may be n.sup.+ doped In.sub.y Ga.sub.1-y, Sb the second layer p.sup.+ doped InAs.sub.1-x Sb.sub.x and the third layer In.sub.y Ga.sub.1-y Sb, repeated to a maximum thickness of 10 m.
REFERENCES:
patent: 3364084 (1968-01-01), Reuberwein
patent: 4207122 (1980-06-01), Goodman
patent: 4368098 (1983-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
patent: 4607272 (1986-08-01), Osbourn
patent: 4630279 (1986-12-01), Kajimura et al.
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4793872 (1988-12-01), Meunier et al.
patent: 4874438 (1989-10-01), Oshita et al.
patent: 4897149 (1990-01-01), Suzuki et al.
patent: 4902356 (1990-02-01), Noguchi et al.
patent: 4952811 (1990-08-01), Elliott
patent: 5232869 (1993-08-01), Frigo et al.
Wickenden et al., Growth of Epitaxial Layers of Gallium Nitride on Silicon Carbide and Corundum Substrates, Journal of Crystal Growth 9, pp. 158-164 (1971).
Sugiyama et al., Vapor Phase Epitaxial Growth and Characterization of Ga.sub.1-2y In.sub.y As.sub.1-x P.sub.x Quarterly Alloys, Japanese Journal of Applied Physics, pp. 2197-2203 (Dec., 1977).
Holmes & Kamath, Growth Characteristics of LPE InSb and InGaSb, Journal of Electronic Materials, vol. 9, pp. 95-111, (Nov. 1, 1980).
Noreika, Francombe & Wood, Growth of Sb and InSb by Molecular-Beam Epitaxy, Journal of Applied Physics 52(12), pp. 7416-7420, (Dec., 1981).
Wood, Noreika & Francombe, Thallium Incorporation in Molecular-Beam-Epitaxial InSb, Journal of Applied Physics 59(10), pp. 3610-3612 (May, 1986).
Williams et al., Molecular-beam Epitaxy of (100) InSb for CdTe/InSb Device Applications, Journal of Applied Physics 63(5), pp. 1526-1532 (Mar. 1, 1988).
Kurtz et al., High Photoconductive Gain in Lateral InAsSb strained-Layer Superlattice Infrared Detectors, Appl. Phys. Lett. 53(20), pp. 1960-1963 (Nov. 14, 1988).
Chyi et al., Growth of InSb and InSb.sub.1-x Sb.sub.x On GaAs By Molecular Beam Epitaxy, Appl.Phys.Lett. pp. 1092-1094 (Sep. 19, 1988).
Williams et al., Heteroepitaxial Growth of InSb on (100) GaAs Using Molecular Beam Epitaxy, Appl.Phys.Lett. 53(13), pp. 1189-1191 (Sep. 26, 1988).
McConville et al., Interfacial Studies and Electrical Characterization of Heteroepitaxial InSb On GaAs (100) Grown By MBE, Journal of Crystal Growth 95, pp. 228-234 (1989).
Razeghi, A Survey of GaInAsP-InP for Photonic and Electronic Applications, vol. 1, The MOCVD Challenge, Chapters 1, 4 & 5 (1989).
Akasaki et al., Effects of Ain Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga.sub.1-x AI.sub.x N Films Grown on Sapphire Substrate by Movpe, Journal of Crystal Growth 98, pp. 209-219 (1988).
Chyi et al., Molecular Beam Epitaxial Growth and Characterization of InSb on Si, Appl.Phys. Lett. 54(11), pp. 1016-1018 (Mar. 13, 1989).
Davis & Thompson, Molecular Beam Epitaxy Growth of InSb Films on GaAs, Appl.Phys. Lett. 54(22), pp. 2235-2237 (May 29, 1989).
Oh et al., Molecular Beam Epitaxial Growth of High-Quality InSb on InP and GaAs Substrates, Journal of Applied Physics 66(8), pp. 3618-3621 (Oct. 15, 1989).
Ma et al., Organometallic Vapor Phase Epitaxial Growth and Characterization of InAsBi and InAsSbBi, Appl.Phys.Lett. 55(23), pp. 2424-2422 (Dec. 4, 1989).
Zhang et al., A Transmission Electron Microscopy and Reflection High-Energy Electron Diffraction Study of the Initial Stages of the Heteroepitaxial Growth of InSb on GaAs (001) by Molecular Beam Epitaxy, Journal of Applied Physics 67(2), pp. 800-806 (Jan. 15, 1990).
Oliveira et al., A Generalized Model for the Reconstruction of (001) Surfaces of III-V Compound Semiconductors Based on a Rheed Study of InSb(001), Surface Science 227, pp. 150-156 (1990).
Chow et al., Growth and Characterization of InAs/Ga.sub.1-x In.sub.x Sb Strained-Layer Superlattices, Appl. Phys. Lett. 56(15), pp. 1418-1420 (Apr. 9, 1990).
Razeghi et al., Ga.sub.0.51 In.sub.0.49 P/Ga.sub.x In.sub.1-x As Lattice-Matched (x=1) and Strained (x=0.85) Two-Dimensional Electron Gas Field-Effect Transistors, Semicond. Sci. Technol. 6, pp. 103-107 (1991).
Biefeld & Hebner, Growth of InSb on GaAs by Metalorganic Chemical Vapor Deposition, Journal of Crystal Growth 109, pp. 272-278 (1991).
Gaskill et al., High Mobility InSb Grown by Organometallic Vapor Phase Epitaxy, Appl. Phys. Lett. 58(17), pp. 1905-1907 (Apr. 29, 1991).
Thompson et al., Use of Atomic Layer Epitaxy Buffer for The Growth of InSb on GaAs by Molecular Beam Epitaxy, Journal of Applied Physics 69(10), pp. 7166-7172 (May 15, 1991).
Garbuzov et al., High-Power 0.8 .mu.m InGaAsP-GaAs SCH SQW Lasers, IEEE Journal of Quantum Electronics, vol. 27, No. 6 (Jun. 6, 1991).
Edgar, J.H., Prospects for Device Implementation of Wide Band Gap Semiconductors, J. Mater. Res., vol. 7, No. 1, pp. 235-252 (Jan. 1, 1992).
Chen et al., Accurate Determination of Misfit Strain, Layer Thickness, and Critical Layer Thickness in Ultrathin Buried Strained InGaAs/GaAs Layer by X-Ray Diffraction, J.Vac.Sci.Techno. B 10(2), pp. 769-770 (Mar./Apr., 1992).
Soderstrom et al., Molecular Beam Epitaxy Growth and Characterization of InSb Layers on GaAs Substrates, Semicond. Sci. Techno. 7, pp. 337-343 (1992).
Kuo et al., Gas Source Molecular-Beam Epitaxial Growth of Normal Incidence GaAs/AlGaAs Quantum Well Infrared Photodetectors, J. Vac. Sci. Techno. B 10(2), pp. 995-997 (Mar./Apr. 1992).
Ferguson et al., RHEED Intensity Effects During the Growth of InAs, InSb and In(As, Sb) By Molecular Beam Epitaxy, Journal of Crystal Growth 121, pp. 267-277 (1992).
Strite & Morkoc, GaN, AIN, and InN: A Review, J. Vac. Sci. Techno. B 10(4) pp. 1237-1248 (Jul./Aug. 1992).
Chung & Gershenzon, The Influence of Oxygen on the Electrical and Optical Properties of GaN Crystals Grown By Metalorganic Vapor Phase Epitaxy, Journal of Applied Physics 72(2), pp. 651-659 (Jul. 15, 1992).
Levine et al., Photoexcited Escape Probability, Optical GaIn, and Noise in Quantum Well Infrared Photodetectors, Journal of Applied Physics 72(9), pp. 4429-4443 (Nov. 1, 1992).
Lee et al., Characterization of Molecular Beam Epitaxially Grown InSb Layers and Diode Structures, Solid-State Electronics, vol. 36, No. 3, pp. 387-389, (1993).
Li et al., Molecular-Beam Epitaxial Growth of InSb on GaAs and Si for Infrared Detector Applications, J. Vac. Sci. Techno. 11(3), pp. 872-874 (May/Jun. 1993).
Choi et al., High Quality InSb Growth on GaAs and Si By Low Pressure Metalorganic Chemical Vapor Deposition, Mat. Res. Soc. Symp. Proc. vol. 281, pp. 375-380 (1993).
Schilfgaarde et al., InTlSb: An Infrared Detector Material?, Appl. Phys. Lett. 62(16), pp. 1857-1859 (Apr. 19, 1993).
Besikci et al., Anomalous Hall Effect in InSb Layers Grown By Metal Organic Chemical Vapor Deposition on GaAs Substrates, Journal of Applied Physics 73(10), pp. 5009-5013 (May 15, 1993).
Choi et al., Growth of In.sub.1-x Tl.sub.x Sb, A New Infrared Material, By Low-Pressure Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett. 63(3), pp. 361-363 (Jul. 19, 1993).
Razeghi et al., In.sub.1-x Tl.sub.x Sb for Long Wavelength Infrared Photodetectors (Invited Talk), Electrochemical Society, Inc. 184 Meeting Program, 3 pages (Oct. 10-15, 1993).
Partin et al., Growth of High Mobility InSb by Metalorganic Chemical Vapor Deposition, Journal of Electronic Materials, vol. 23, No. 2 (Jun. 11, 1993).
Staveteig et al., Photoconductance Measurements on InTlSb/InSb/GaAs Grown by Low-Pressure Metalorganic Chemical Vapor Deposition, pp. 460-462 (Jan. 24, 1994).
Choi et al., Characterization of InTlSb/InSb Grown by Low-Pressure Metal-Organic Chemical Vapor deposition On a GaAs Substrate, Journal of Applied Physics 75(6), vol. 75, No. 6 (Mar. 15, 1994).
Diaz et al., Efficiency of Photoluminescence and Excess Carrier Confine
Piotrowski Jozef F.
Razeghi Manijeh
Mintel William
Northwestern University
LandOfFree
Multiple stacked Sb-based heterostructures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple stacked Sb-based heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple stacked Sb-based heterostructures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1561521