Multiple stacked capacitors formed within an opening with...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S239000, C438S253000, C438S397000

Reexamination Certificate

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07105418

ABSTRACT:
For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes within the opening. The stacked capacitors are formed with the lower electrodes within the opening by depositing a capacitor dielectric and an upper electrode within the opening. With such a relatively large opening, a capacitor dielectric of the stacked capacitors is deposited with a large thickness for improving reliability of the stacked capacitors.

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