Multiple spiral inductors for DC biasing of an amplifier

Details Multiple spiral inductors for DC biasing of an amplifier Multiple spiral inductors for DC biasing of an amplifier

1987-04-15

1989-06-20

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330 54, 330286, H03F 360

Patent

active

048412538

ABSTRACT:
A monolithic semiconductor having an on-chip DC biasing including a plurality of series connected spiral inductors connected between the respective biasing and the semiconductor circuit. The spiral inductors provide a low resistive path for the DC biasing while also having a high inductance for isolating the RF signal from the bias sources, thereby improving the low frequency response. The capacitance associated with the individual spirals, however, is significantly less than the capacitance associated with a single spiral inductor having an equivalent inductance of the small series connected spirals; thus the higher frequency response is not degraded while the low frequency response has been improved.

REFERENCES:
patent: 2942201 (1960-06-01), De Socio
patent: 4342967 (1982-08-01), Regan et al.
Kessous et al., "Amplificateur VHF En Class E Utilisant un Transistor A Effect de Champ (FET) VMOS De Puissance", MIEE AGEN (Switzerland) No. 30, Oct. 1980, pp. 45-49.
Lee, "MOSFETs Rejuvenate Old Design for CATV Broadband Amplifiers", Electronics, vol. 44, No. 6, Mar. 15, 1971, pp. 72-75.
Master et al., "Silicon-On Sapphire Monolithic Microwave ICs", 1981, IEEE International Solid-State Circuits Conf., Feb. 18, 1981, pp. 72-73.
Pengelly et al., "A Comparison Between Actively and Passively Matched S-Band GaAs Monolithic FET Amplifiers", 1981, IEEE MTT-S International Microwave Digest, Jun. 15-19, 1981, pp. 367-369.
1983 IEEE MTT-S Digest, pp. 70-73.

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