Multiple ROM data state, read/write memory cell

Details Multiple ROM data state, read/write memory cell Multiple ROM data state, read/write memory cell

1986-07-01

1989-02-14

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Resistive

365154, 307279, G11C 1700, G11C 1100, H03K 326

Patent

active

048051420

ABSTRACT:
A read/write memory cell is disclosed in which multiple ROM data states can be stored. Independent sensing of the resistance values of each of two resistors accounts for the storage of multiple ROM data states. The resistors are encompassed in a pair of cross-coupled resistive gate devices forming branch circuits, thereby allowing each branch circuit to control the conduction of current in the other branch circuit. This allows for read/write data storage in flip-flop-like fashion. In addition, since resistive gate devices are used, the ROM data may be programmed during the later stages of manufacturing.

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