Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-06-07
2010-06-15
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C438S029000
Reexamination Certificate
active
07737456
ABSTRACT:
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
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Choi Kwang-ki
Hong Hyun-gi
Kim Hyun-soo
Kim Kyoung-kook
Seong Tae-yeon
Harness & Dickey & Pierce P.L.C.
Lee Calvin
Samsung Electro-Mechanics Co. Ltd.
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