Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-11-12
1993-03-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257186, 257192, 257 17, 257185, H01L 2714
Patent
active
051986825
ABSTRACT:
A multiple quantum well superlattice radiation detector is compositionally graded to establish an internal electric field within the superlattice that allows the device to operate with a reduced or zero externally applied bias voltage. The compositional grading can be implemented by grading the doping levels of successive quantum wells or the relative proportions of elements in successive barrier layers of the superlattice, or by a combination of the two. If a tunneling current blocking layer is employed, it can also be compositionally graded to inhibit a substantial increase in the blocking layer's barrier energy level near a charge carrier collector on the other side of the blocking layer from the superlattice. The charge carrier collector can itself be provided with a graded dopant concentration near the blocking layer to inhibit reverse bias voltage breakdown in the blocking layer.
REFERENCES:
patent: 3721583 (1973-03-01), Blakeslee
patent: 4558336 (1985-12-01), Chang et al.
patent: 5023685 (1991-06-01), Bethea et al.
Wada et al., "Very High Speed GaInAs Metal-Semiconductor-Metal Photodiode Incorporating an AlInAs/GaInAs Graded Superlattice", Appl. Phys. Lett. 54(1), Jan. 2, 1989, pp. 16-17.
Lee et al., "High Quality In.sub.0.53 Ga.sub.0.47 As Schottky Diode Formed by Graded Superlattice of In.sub.0.53 Ga.sub.0.47 As/In.sub.0.52 Al.sub.0.48 As", Appl. Phys. Lett. 54(19), May 8, 1989, pp. 1863-1865.
Wen Cheng P.
Wu Chan-Shin
Denson-Low W. K.
Hughes Aircraft Company
Mintel William
Schubert W. C.
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