Multiple quantum well structure and semiconductor device using t

Details Multiple quantum well structure and semiconductor device using t Multiple quantum well structure and semiconductor device using t

1993-06-18

1995-02-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 14, 257101, H01S 318, H01L 3106

Patent

active

053923065

ABSTRACT:
A multiple quantum well structure which permits substantially uniform injection of carriers from the outside into respective quantum well layers of the multiple quantum well and a semiconductor device employing such a multiple quantum well structure. A multiple quantum well structure is formed by laminating at least two pairs of quantum well layers each having a thickness substantially equal to the de Broglie's wave-length of electrons and barrier layers of an energy gap greater than that of the quantum well layers, and the multiple quantum well structure is doped with at least one of p-type and n-type impurities in a manner to slope the energy band of the entire multiple quantum well structure so that carriers injected thereinto are distributed uniformly throughout it.

REFERENCES:
patent: 4701774 (1987-10-01), McIlroy et al.
patent: 5172384 (1992-12-01), Goronkin et al.

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