Coherent light generators – Particular active media – Semiconductor
Patent
1995-07-07
1996-09-24
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
055598200
ABSTRACT:
A stripe structure including an MQW active layer has a width equal to or smaller than twice the diffusion length of holes, and a p type semiconductor layer for injecting holes into the MQW active layer is formed on both sides of the stripe structure in contact with the sides of the stripe structure. Even when any MQW structure is used as the MQW active layer in order to reduce the temperature dependency of the threshold current, holes are injected into QW layers from the p type semiconductor layer which is in direct contact with all the QW layers in the MQW active layer, so that no local presence of holes in some QW layers occurs. Since the width of the stripe structure is equal to or smaller than twice the diffusion length of holes, the holes are uniformly injected in the direction parallel to the QW surface. That is, it is possible to improve the MQW active layer, while avoiding the local presence of holes, to reduce the temperature dependency of the threshold current which is accompanied with the local presence of holes in the conventional structure. This structure can reduce the temperature dependency of the threshold current of a semiconductor laser.
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M. Nido, et al., "Analysis of Differential Gain in InGaAs-InGaAsP Compressive and Tensile Strained Quantum-Well Lasers and Its Application for Estimation of High-Speed Modulation Limit", IEEE J. Quantum Electron., vol. 29, No. 3, Mar. 1993, pp. 885-895.
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Kimura Akitaka
Nido Masaaki
Suzuki Akira
Tomita Akihisa
Davie James W.
NEC Corporation
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