Multiple quantum-well infrared detector

Details Multiple quantum-well infrared detector Multiple quantum-well infrared detector

1983-12-02

1986-10-28

James, Andrew J.

357 30, 357 16, 357 4, 357 13, H01L 29167, H01L 2714

Patent

active

046202145

ABSTRACT:
Alternating layers of N+ GaAs (80 .ANG.) and N+ Ga.sub.1-x Al.sub.x As (300 .ANG.), all heavily doped with a uniform flux of Sn, and biased by 2V, provide a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells. Fine tuning of the cutoff wavelength may be achieved by varying the bias voltage. By biasing the individual quantum-well layers progressively through a voltage divider, an avalanche mechanism may be achieved in the detector for signal amplification. The detectors may be fabricated in large two-dimensional arrays.

REFERENCES:
patent: 3801391 (1974-04-01), Dyment et al.
patent: 4071383 (1978-01-01), Nagata et al.
patent: 4127862 (1978-11-01), Ilegems et al.
patent: 4203124 (1980-05-01), Gordon
patent: 4250516 (1981-02-01), Worlock
patent: 4386429 (1983-05-01), Anthony
patent: 4450463 (1984-05-01), Chin
patent: 4486765 (1984-12-01), Capasso
Applied Physics Letters, vol. 36 #5, Mar. 1980, pp. 373-375, by Allyn et al.

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