Multiple-quantum-layer photodetector

Details Multiple-quantum-layer photodetector Multiple-quantum-layer photodetector

1981-06-29

1984-05-22

Edlow, Martin H.

357 16, 357 4, H01L 2714

Patent

active

044504632

ABSTRACT:
Disclosed is a multiple-quantum-layer detector for responding to photons having a predetermined amount of energy. The detector includes a purality of parallel layers of a first semiconducting material having a first conduction band energy level, with a plurality of layers of a second semiconducting material parallel to the first layers and having a second conduction band energy level differing from the first conduction band energy level by no more than the predetermined energy. The second layers alternate with the first to establish a plurality of parallel heterojunctions. First and second electrodes are provided for applying an electric potential across the alternating layers.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4208667 (1980-06-01), Chang
patent: 4250515 (1981-02-01), Esaki
patent: 4257055 (1981-03-01), Hess
patent: 4348686 (1982-09-01), Esaki
Esaki, et al., Superlattice and Negative Differential Conductivity in Semiconductors, IBM J. Res. Develop., p. 61 (Jan., 1970).

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