Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-08-23
1994-08-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257532, 333 24C, H01L 2702
Patent
active
053389506
ABSTRACT:
A capacitor element for an integrated circuit comprises a thin layer of dielectric material laminarly disposed between first and second layers of electrically conductive material. Each of the layers has n sides, where n is an even intergergreater than four. Preferably, each layer of the capacitor, and therefore the capacitor itself, is shaped as an equiangular polygon. Although, the capacitor may be configured as a hexagon, a decagon, etc., an octagonal configuration is preferred. By eliminating the 90 feed bend, substantial reductions in discontinuity reactances are obtained.
The capacitor element may be provided as an element of a hybrid or a monolithic circuit. When the capacitor element is employed as an element of a microwave circuit, the first conductive layer is deposited on a substrate of a semi-insulating material such as gallium arsenide. The dielectric layer may be formed from silicon nitride, silicon dioxide, silica, or tantalum pentoxide, depending upon the specific capacitance required by the application.
REFERENCES:
patent: 4656054 (1987-04-01), Inoue
patent: 4697159 (1993-09-01), Sechi et al.
"Simulation Tool Accurately Models MMIC Passive Elements", Microwave & RF, vol. 27, No. 1, Jan. 1988, by: Y. L. Chow, G. Howard, and M. G. Stubbs.
"Dielectric Films for Capacitor Applications in Electronic Technology", Proceedings of the IEEE, vol. 59, No. 10, Oct. 1971, by: J. R. Szedon, W. J. Takei.
"Applications of Integrated Circuit Technology to Microwave Frequencies", Proceedings of the IEEE, vol. 59, No. 8., Jan. 7, 1971, by: Harold Sobol.
Hogan Patrick M.
ITT Corporation
Jackson Jerome
Monin, Jr. Donald L.
Plevy Arthur L.
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