Multiple point gate oxide integrity test method and system...

Details Multiple point gate oxide integrity test method and system... Multiple point gate oxide integrity test method and system...

2008-06-06

2009-08-11

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C324S763010, C324S073100

Reexamination Certificate

active

07573285

ABSTRACT:
A method for testing a semiconductor wafer using an in-line process control, e.g., within one or more manufacturing processes in a wafer fabrication facility and/or test/sort operation. The method includes transferring a semiconductor wafer to a test station. The method includes applying an operating voltage on a gate of a test pattern on a semiconductor wafer using one or more probing devices. The method includes measuring a first leakage current associated with the operating voltage. If the measured first current is higher than a first predetermined amount, the device is an initial failure. If the measured first current is below the first predetermined amount, the device is subjected to a second voltage. The method includes applying the second voltage on the gate of the test pattern on the semiconductor wafer and measuring a second leakage current associated with the second voltage. If the second measured leakage current is higher than a second predetermined amount, the device is an extrinsic failure. If the second measured leakage current is below the second predetermined amount, the device a good device. The method provides a way to monitor gate oxide integrity and/or process stability using extrinsic measurements according to a specific embodiment. The method includes determining a breakdown voltage associated with the second measured leakage value. In a preferred embodiment, the second measured leakage current is characterized as extrinsic information and the breakdown voltage is characterized as intrinsic information.

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Office Action of U.S. Appl. No. 11/227,182 dated Sep. 14, 2005, 8 pages total.

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