Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-10-29
1999-11-09
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257183, 257189, H01L 2906
Patent
active
059819693
ABSTRACT:
A multiple peak resonant tunneling diode (10) includes multiple vertical semiconductor structures (12, 13). The vertical structures (12, 13) include a resonant tunneling diode having a predetermined cross-sectional area and a series resistor of a predetermined resistance. The vertical structures (12, 13) are spaced from one another and interconnected in parallel. Additionally, the vertical semiconductor structures (12, 13) are fabricated such that their predetermined diode cross-sectional areas and series resistances have values that vary by predetermined amounts to adjust the respective peak currents and/or peak voltages of the vertical semiconductor structures (12, 13).
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Seabaugh Alan Carter
Yuan Han-Tzong
Brady, lll Wade James
Crane Sara
Donaldson Richard L.
Swayze, Jr. W. Daniel
Texas Instruments Incorporated
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