Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-02-12
2010-02-23
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S758000, C438S706000, C438S671000
Reexamination Certificate
active
07666794
ABSTRACT:
A method of double patterning a semiconductor structure with a single material which after patterning becomes a permanent part of the semiconductor structure. More specifically, a method to form a patterned semiconductor structure with small features is provided which are difficult to obtain using conventional exposure lithographic processes. The method of the present invention includes the use of patternable low-k dielectric materials which after patterning remain as a low k dielectric material within the semiconductor structure. The method is useful in forming semiconductor interconnect structures in which the patternable low k dielectric materials after patterning and curing become a permanent element, e.g., a patterned interlayer low k dielectric material, of the interconnect structure.
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Owe-Yang, D.C., et al., Proc. SPIE, vol. 5753, Adv. Resist technology and Processing, p. 171-180, 2005.
Diallo Mamadou
International Business Machines - Corporation
Morris, Esq. Daniel P.
Scully , Scott, Murphy & Presser, P.C.
Toledo Fernando L
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