Metal treatment – Compositions – Heat treating
Patent
1975-01-30
1976-08-03
Ozaki, G.
Metal treatment
Compositions
Heat treating
148171, 148172, 148177, 148179, 252 623E, 252 623GA, 357 13, H01L 734
Patent
active
039727416
ABSTRACT:
A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behind a recrystallized region of semiconductor material containing at least two dopant materials therein. Following thermomigration of the droplet, the body of semiconductor material is subjected to a post-thermomigration heat treatment at an appropriate temperature to allow the dopants in the region produced by thermomigration to diffuse substantially perpendicular to that region into the remaining material of the body. The slower diffusing dopant species is largely left behind in the region to form a region of conductivity type determined by the slower diffusing species while the faster diffusing species will diffuse outward and form an annulus around the recrystallized region of a conductivity type determined by the faster diffusing species. The original semiconductor material of the body will form a third conductivity type region.
With three dopants of different diffusivity in the alloy droplet it is possible to produce four regions of different type conductivity (including the original body of semiconductor material) with a single droplet thermomigration.
REFERENCES:
patent: 2701326 (1955-02-01), Pfann et al.
patent: 2813048 (1957-11-01), Pfann
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Ozaki G.
Squillaro Jerome C.
Winegar Donald M.
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