Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2005-01-04
2005-01-04
Phan, Trong (Department: 2818)
Static information storage and retrieval
Format or disposition of elements
C365S063000
Reexamination Certificate
active
06839262
ABSTRACT:
A multiple-mode memory includes a three-dimensional array of word lines, bit lines and memory cells. The memory cells are arranged in multiple vertically stacked layers. In some layers the memory cells are implemented as field-programmable write-once memory cells, and in other layers the memory cells are implemented as field-programmable re-writable memory cells. In this way, both re-writability and permanent data storage are provided in an inexpensive, single-chip solution. Additional types and numbers of types of memory cells can be used.
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Moore Christopher S.
Vyvoda Michael A.
Brinks Hofer Gilson & Lione
Matrix Semiconductor Inc.
Phan Trong
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