Multiple metallization structure for a reflection type liquid cr

Details Multiple metallization structure for a reflection type liquid cr Multiple metallization structure for a reflection type liquid cr

1997-07-11

2000-04-11

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257752, 257758, 257760, 257762, 257764, 257765, 257766, 257768, 257769, 257770, 349113, 349139, 349147, 349149, 349152, H01L 2348, H01L 2352, H01L 2940

Patent

active

060491329

ABSTRACT:
In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.

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