Multiple mesa semiconductor structure

Details Multiple mesa semiconductor structure Multiple mesa semiconductor structure

1975-04-08

1976-10-26

Heyman, John S.

357 56, 357 73, H01L 2906, H01L 2330

Patent

active

039887650

ABSTRACT:
The structure is a semiconductor island with a space etched in the periphery to form two steps. The steps may be characterized as two mesas, a small mesa being located on top of a large mesa. Between the top of the small mesa and the top of the large mesa, a PN junction is located. The edge of the junction is protected by a passivation layer of relatively thick portions of glass deposited adjacent the steps.

REFERENCES:
patent: 3410736 (1968-11-01), Tokuyama et al.
patent: 3506502 (1970-04-01), Nakamura
patent: 3523223 (1970-08-01), Luxem et al.
patent: 3642597 (1972-02-01), Sheldon
patent: 3767485 (1973-10-01), Sahagun

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