Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1996-11-12
1998-05-26
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257108, 257295, 324249, 324260, 324263, 365 32, 365 65, 365 66, H01L 2982, H01L 4300
Patent
active
057570566
ABSTRACT:
A double tunnel junction is disclosed that can be used as a magnetic sensor or as random access memories. The preferred embodiment comprises three magnetic metal materials separated by two insulating layers. A current is passed through the first tunnel junction thereby developing a voltage in the second junction. The resistance of this device can be changed over a 100% when an external magnetic field of just a few gauss is applied.
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L. Kladanoff and G. Bayin, Quantum Statistical Mechanics, Chapter 7, Benjamin, N.Y. (1962).
Saadat Mahshid D.
University of Delaware
Wilson Allan R.
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