Multiple magnetic tunnel structures

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

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257108, 257295, 324249, 324260, 324263, 365 32, 365 65, 365 66, H01L 2982, H01L 4300

Patent

active

057570566

ABSTRACT:
A double tunnel junction is disclosed that can be used as a magnetic sensor or as random access memories. The preferred embodiment comprises three magnetic metal materials separated by two insulating layers. A current is passed through the first tunnel junction thereby developing a voltage in the second junction. The resistance of this device can be changed over a 100% when an external magnetic field of just a few gauss is applied.

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"Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions", Physical Review Letters, vol. 74, No. 16, pp. 3273-3276 (Apr. 17, 1995).
L. Kladanoff and G. Bayin, Quantum Statistical Mechanics, Chapter 7, Benjamin, N.Y. (1962).

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