Multiple level voltage generator for semiconductor memory device

Electric power conversion systems – Current conversion – With voltage multiplication means

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327536, H02M 725

Patent

active

058896643

ABSTRACT:
A multiple level voltage generator for a semiconductor memory device, comprising a back bias voltage charge pumping circuit for pumping charge to a back bias voltage node, a back bias voltage level detector for detecting the level of a back bias voltage at the back bias voltage node and generating first and second back bias voltage detection signals in accordance with the detected result, a high voltage charge pumping circuit for pumping charge to a high voltage node, a high voltage level detector for detecting the level of a high voltage at the high voltage node and generating first and second high voltage detection signals in accordance with the detected result, a control logic circuit for generating a control signal in response to the second back bias voltage detection signal from the back bias voltage level detector and the second high voltage detection signal from the high voltage level detector, and an oscillator for generating first and second output signals in response to the control signal from the control logic circuit, the first back bias voltage detection signal from the back bias voltage level detector and the first high voltage detection signal from the high voltage level detector and applying the generated first and second output signals to the back bias voltage charge pumping circuit and the high voltage charge pumping circuit, respectively.

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patent: 5796600 (1998-08-01), Yun
patent: 5818766 (1998-10-01), Song

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