Multiple layer wide bandgap collector structure for bipolar tran

Details Multiple layer wide bandgap collector structure for bipolar tran Multiple layer wide bandgap collector structure for bipolar tran

1993-08-10

1997-11-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 310328

Patent

active

056843100

ABSTRACT:
Generally, and in one form of the invention, a multiple layer wide bandgap collector structure is provided which comprises a relatively thin, highly doped layer 12 and a relatively thick, low doped or non-intentionally doped layer 14. Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 4958208 (1990-09-01), Tanaka
patent: 5019890 (1991-05-01), Ishibashi et al.
patent: 5150185 (1992-09-01), Yamada
patent: 5177583 (1993-01-01), Endo et al.

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