Multiple layer, tungsten/titanium/titanium nitride adhesion/diff

Details Multiple layer, tungsten/titanium/titanium nitride adhesion/diff Multiple layer, tungsten/titanium/titanium nitride adhesion/diff

1987-05-29

1988-06-28

Rutledge, L. Dewayne

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428620, 428628, 428641, 428660, 428665, 428672, 20419217, 427123, 357 71, 437246, B32B 1504

Patent

active

047538511

ABSTRACT:
The inability of conventional adhesion/diffusion barrier Ti-TiN laminates to secure a narrow linewidth electrodeposited gold layer to a silicon structure and prevent unwanted gold diffusion during anneal cycles at temperatures greater than 370.degree. C. for substantial periods of time is overcome by the addition of a medium thickness (.gtoreq.1,500.ANG.) layer of tungsten over the exposed silicon prior to formation of the titanium/titanium nitride laminate structure.

REFERENCES:
patent: 4226082 (1980-10-01), Nishida
patent: 4403014 (1983-09-01), Bergmann
patent: 4702967 (1987-10-01), Black et al.
Nelson, C. W., "Metallization and Glassing of Silicon Integrated Circuits," presented at 1969 International Society for Microelectronics Symposium, Oct. 1, 1969.

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