Multiple layer structure for substrate noise isolation

Details Multiple layer structure for substrate noise isolation Multiple layer structure for substrate noise isolation

2006-07-04

2006-07-04

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S630000, C257S659000, C257SE21546, C438S404000, C438S406000

Reexamination Certificate

active

07071530

ABSTRACT:
A method of forming a semiconductor structure, comprising: providing a substrate having a buried insulative layer and a heavily doped layer; forming a first trench within the substrate around a protected area; filling the first trench with an insulative material, wherein the first trench filled with the insulative material and the buried insulative layer combine to form a high impedance noise isolation that surrounds the protected area on all sides except one side of the protected area to isolate noise from the protected area; forming a second trench within the substrate around the first trench; and filling the second trench with a conductive material, wherein the second trench filled with the conductive material and the heavily doped layer combine to form a low impedance ground path that surrounds the high impedance noise isolation on all sides except one side of the high impedance noise isolation to isolate noise from the protected area.

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