Multiple layer static random access memory device

Details Multiple layer static random access memory device Multiple layer static random access memory device

1989-04-13

1991-03-19

Prenty, Mark

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 4, 357 237, 365182, 365188, H01L 2702, H01L 2712, H01L 2978, G11C 1134

Patent

active

050015397

ABSTRACT:
A stacked static random access memory SRAM having a plurality of memory cells is disclosed. Individual memory cell has a portion formed in an upper active element layer in the device structure and a portion formed in a lower active element layer in the device structure separated from the upper layer by an intermediate insulating layer. A word line, a bit line and access transistors are formed in the same upper active element layer, eliminating the need for interconnecting them through the insulating layer. The elimination of the inter-layer connections helps to reduce the number of through-holes required to be made in the insulating layer. This in turn reduces the area to be occupied by the memory cell and leads to a simplified manufacturing process of the SRAM.

REFERENCES:
patent: 4809046 (1989-02-01), Aoyama et al.
Jacob Millman et al., "Microelectronics", 1987, pp. 356-358.

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