Multiple layer etch stop and etching method

Details Multiple layer etch stop and etching method Multiple layer etch stop and etching method

2005-02-22

2008-03-18

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21597, C438S712000, C438S735000

Reexamination Certificate

active

07344994

ABSTRACT:
A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.

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