Multiple layer acoustical structures for thin-film resonator bas

Details Multiple layer acoustical structures for thin-film resonator bas Multiple layer acoustical structures for thin-film resonator bas

1997-01-29

1999-01-26

Pascal, Robert

Wave transmission lines and networks

Coupling networks

Electromechanical filter

310321, H03H 917

Patent

active

058642617

ABSTRACT:
A stacked thin film device structure grown on a substrate, the resonator structure comprising a thin film device comprising at least one piezoelectric crystal layer sandwiched between metallic electrodes, and constructed to have an acoustic response in a given frequency range, and an acoustical stack disposed between and joining the thin film device and the substrate and comprising multiple layers of material, each layer having a characteristic thickness and impedance and being composed of a non-lossless material, the characteristic thicknesses and impedances of the layers being adjusted to determine the input impedance presented to the thin film device, and thereby determining the acoustical coupling between the thin film device and the substrate.

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"Thin Film Piezoelectric Resonating Device"; Collins Radio Company Engineering Proposal; Feb. 26, 1965.
Lakin, Wang, Kline, Landin, Chen, and Hunt; "Thin Film Resonators and Filters"; 1982--Ultronics Symposium; 10 pages (pp. 466--475).
Lakin, Kline, Ketcham, Landin, Burkland, McCarron, Braymen, Burns; "Thin Film Resonator Technology"; 41st Annual Frequency Control Symposium--1987; 1987; 11 pages (pp. 371--381).

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