Multiple gate electrode linewidth measurement and...

Details Multiple gate electrode linewidth measurement and... Multiple gate electrode linewidth measurement and...

2007-05-08

2007-05-08

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C438S128000, C438S129000, C438S599000

Reexamination Certificate

active

10684855

ABSTRACT:
A method for fabricating a semiconductor product first provides an embedded semiconductor product comprising: (1) a logic region having formed therein a logic field effect transistor device; (2) a memory region having formed therein a memory field effect transistor device; and (3) a kerf region having formed therein a kerf field effect transistor device. The method also provides for measuring for the embedded semiconductor product a gate electrode linewidth for each of the logic field effect transistor device, the memory field effect transistor device and the kerf field effect transistor device. The measured gate electrode linewidths may be compared among themselves or to specified target values for purposes photoexposure process control.

REFERENCES:
patent: 5899706 (1999-05-01), Kluwe et al.
patent: 6365422 (2002-04-01), Hewett et al.

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