Multiple-function GaAs transistors with very strong negative dif

Details Multiple-function GaAs transistors with very strong negative dif Multiple-function GaAs transistors with very strong negative dif

1998-02-11

2000-03-28

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 8, 257 24, H01L 29812, H01L 4700

Patent

active

060435186

ABSTRACT:
Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n.sup.+ -GaAs substrates. The real-space transfer transistors (RST), the collector is located under the substrate, reveal very strong negative differential resistance phenomena. The RST structure using an InGaAs channel manifests superior characteristics of a very high peak-to-valley current ratio up to 430,000 at room temperature, a peak current as high as 100 mA, very sharp charge injection, and a valley current as broad as 5.5V. Meanwhile, high performance heterostructure field effect transistors can be implemented on the same wafer by further evaporating a gate between source and drain electrodes. In order to significantly reduce leakage current, an ohmic recession is made at the source and drain. These new multiple-functions device may be used in high-speed, low-noise, and/or high power microwave oscillators and amplifiers.

REFERENCES:
patent: 5060234 (1991-10-01), Schubert et al.
patent: 5323030 (1994-06-01), Kosica et al.
patent: 5488237 (1996-01-01), Kuwata

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