Multiple FET device having direct-coupled stages for improved mi

Details Multiple FET device having direct-coupled stages for improved mi Multiple FET device having direct-coupled stages for improved mi

1986-11-24

1988-06-07

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330306, 330311, H03F 3193

Patent

active

047499591

ABSTRACT:
A field effect transistor microwave circuit device includes first and second field effect transistors having common source connections with a pair of coupled transmission lines connecting the drain of a first transistor to the source of the second transistor and the source of the first transistor to the gate of the second transistor. The cross coupled transmission lines function as a balun between the transistors. The device is formed in III-V semiconductor and has an increased operating range in microwave frequencies. In alternative embodiments, the balun is connected to the circuit output thereby permitting the cascading of a plurality of FET devices. The balun can be integrated into the device structure or connected as a discrete element in a hybrid circuit arrangement.

REFERENCES:
patent: 4277764 (1981-07-01), Rosier et al.
Glaze et al, "FET Amplifier Spans 4-12 GHz", Microwave System News, Feb. 1978, pp. 49-54, 58, 59.
Pengelly, "Transmit/Receive Module using GaAs ICs", Electronic Engineering, Nov. 1984, pp. 141-144, 149.

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