Multiple exposure method for forming a patterned photoresist...

Details Multiple exposure method for forming a patterned photoresist... Multiple exposure method for forming a patterned photoresist...

2005-06-14

2005-06-14

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S296000, C430S312000, C430S327000, C430S328000, C430S394000, C430S942000, C430S945000

Reexamination Certificate

active

06905802

ABSTRACT:
A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.

REFERENCES:
patent: 6194103 (2001-02-01), Tzu et al.
patent: 6767674 (2004-07-01), Carpi

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