Multiple epitaxial region wafers with optical connectivity

Details Multiple epitaxial region wafers with optical connectivity Multiple epitaxial region wafers with optical connectivity

2005-12-13

2005-12-13

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C438S022000

Reexamination Certificate

active

06974966

ABSTRACT:
A semiconductor wafer according to the present invention has multiple epitaxial regions comprising planar epitaxial surfaces and edge surfaces, where the planar epitaxial surfaces are wafer bonded at different lateral positions to a host substrate, and an edge surface of each epitaxial region is bonded to an edge surface of an adjacent epitaxial region. This enables the fabrication of photonic integrated circuits that traverse the different regions, providing previously unattainable functionality, performance, or level of integration. The method of achieving this includes placing sections cleaved from various source wafers onto a single common host substrate, and applying a combination of vertical and lateral pressure to achieve bonding of both planar surfaces and edge surfaces.

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http://www.photonics.com/dictionary Definition of the word “Kovar”.
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