Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2010-03-10
2010-11-16
Geyer, Scott B (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
Reexamination Certificate
active
07833293
ABSTRACT:
A Zener diode-capacitor combination wherein a Zener diode is mounted in the capacitor body and connected in parallel with the capacitor after the capacitor has been voltage tested. A welded strap or jumper wire completing the diode circuit or a connection of separate terminations during soldering may be used to complete the circuit.
REFERENCES:
patent: 4100479 (1978-07-01), Buck
patent: 4907131 (1990-03-01), Neal
patent: 5434540 (1995-07-01), Yamamoto et al.
patent: 6040229 (2000-03-01), Kuriyama
Quirk, Michael. Serda, Julian. Semiconductor Manufacturing Technology, 2001, Prentice Hall, p. 552.
Prymak John D.
Young Eric Jayson
Geyer Scott B
Guy Joseph T.
KEMET Electronics Corporation
Nexsen Pruet , LLC
Nikmanesh Seahvosh J
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