Coherent light generators – Particular active media – Semiconductor
Patent
1982-06-02
1984-11-20
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 46, H01S 319
Patent
active
044843321
ABSTRACT:
A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn second layer, an InP:Te third layer, and a capping n-type fourth layer. Multiple stripe-like openings are formed in the above layers and double heterojunction buried lasers are formed therein. The double heterojunction buried lasers include the following layers in order: an InP:Te heterojunction first layer, an InGaAsP quarternary second layer, an InP:Zn heterojunction third layer, and an InGaAsP:Zn capping fourth layer. A reverse biased junction is formed in said bulk structure so that current is confined to the lasers; the active lasing regions are above the p-type layers of the p-n reversed bias junction. The double heterojunction buried lasers can be cleaved from the laser device and operated as a single device.
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Tsang et al., "A Densely Packed Monolithic Linear Array of GaAs-Al.sub.x Ga.sub.1-x As Strip Buried Heterostructure Laser", APL 34(2), 15 Jan. 1979, pp. 162-165.
Collier Stanton E.
Davie James W.
Singer Donald J.
The United States of America as represented by the Secretary of
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