Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-12-01
2000-08-29
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257431, 257458, 257461, 257656, H01L 3100, H01L 31075, H01L 31105, H01L 31117
Patent
active
06111300&
ABSTRACT:
A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range of wavelengths. The substrate includes a second doped region. The second doped region conducts charge when receiving photons having a second range of wavelengths. The photons having the second range of wavelengths passing through the diode substantially undetected by the diode. The substrate can include a doped well within the substrate. The doped well conducts charge when receiving photons having a third range of wavelengths. The photons having the third range of wavelengths pass through the diode substantially undetected by the diode.
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Klaus Eberhardt, et al; "Three-Color Sensor Based on Amorphous n-i-p-i-n Layer Sequence"; IEEE Transactions on Electron Devices, US, IEEE Inc., New York; vol. 42, No. 10; pp. 1763-1768, Oct. 1995.
Cao Min
Perner Frederick A.
Vande Voorde Paul J.
Vook Dietrich W.
Agilent Technologies
Hardy David
Short Brian
Wilson Allan R.
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