Multiple channel high electron mobility transistor

Details Multiple channel high electron mobility transistor Multiple channel high electron mobility transistor

1992-03-13

1993-06-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 24, 257286, 257280, H01L 2980, H01L 29205

Patent

active

052237249

ABSTRACT:
An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate voltage-to-output current (drain) transfer characteristic of the FET results. In addition, the electrical characteristics of the FET may be adjusted by changing the spacing of the drain and source diffusions from the gate.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4641161 (1987-02-01), Kim et al.
patent: 4821093 (1989-04-01), Iafrate et al.
Okada et al., "Quasi-One-dimentional Channel GaAs/AlGaAs Modulation Doped FET Using Corrugated Gate Structure", Extended Abstracts of the 20th Conf. on Solid State Dev. & Mat. Tokyo (1988) pp. 503-506.
Drummond et al., "p-channel, strained quantum well, field effect transistor", Appl. Phys. Lett. 49(8), 25 Aug. 1986, pp. 461-463.
Hikosaka et al., "A 30-GHz 1-W Power HEMT", IEEE Electron, Dev. Lett., vol. EDL-8, No. 11, Nov. 1987, pp. 521-523.
Houssaye et al., "Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lenghts to 550.ANG.", IEEE Electron. Dev. Lett., vol. 9, No. 3, Mar. 1988, pp. 148-150.
Akinwande et al., "A Self-Align . . . MODFET", IEEE Elect. Dev. Let. vol. 9, No. 6, Jun. 1988, pp. 275-277.
Vinter, "Tunneling transfer field-effect transistor: A negative transconductance device", Appl. Phys. Lett. 50(7), 16 Feb. 1987, pp. 410-412.
Saunier et al., "High-Efficiency Millimeter-Wave GaAs/GaA/As Power HEMT's", IEEE Electron Dev. Lett., vol. Edl-7, No. 9, Sep. 1986, pp. 503-505.
Henderson et al., "Determination of Carrier Saturation Velocity in High-Performance In GaAs/AlGaAs Modulation-Doped Field Effect Transistors", IEEE Elec. Dev. Lett., vol. EDL-7, No. 5, May 1986.
"Modeling for Electron Transport in AlGaAs/GaAs/AlGaAs Double-Heterojunction Structures", IEEE Transactions on Electron Devices, vol. 36, No. 11, Nov. 1989, Masaaki Tomizawa, Tomofumi Furuta, Kiyoyuki Yokoyama, Akira Yoshii, pp. 2380-2385.

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