Multiple chamber deposition and isolation system and method

Details Multiple chamber deposition and isolation system and method Multiple chamber deposition and isolation system and method

1981-09-28

1984-03-27

Smith, John D.

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723, 118725, 118 501, 118733, 118900, 136258, 427 39, 427 85, C23C 1310, C23C 1312

Patent

active

044387237

ABSTRACT:
The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi-layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element. The second chamber is provided with starting materials including at least one gas from which the deposited layers are derived and the first and third chambers are provided with respective dopants to render the first and third layers opposite in conductivity. Contamination of the second chamber by the dopants in the first and third chambers is prevented by the establishment of unidirectional flow of the at least one gas from the second chamber to the first and third chambers.

REFERENCES:
patent: 3294670 (1966-12-01), Charschan et al.
patent: 3530057 (1970-09-01), Muly, Jr.
patent: 3805736 (1974-04-01), Foehring et al.
patent: 4015558 (1977-04-01), Small et al.

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