Multiple bit read-only memory cell and its sense amplifier

Static information storage and retrieval – Read only systems – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365189, G11C 1700, G11C 706

Patent

active

042875706

ABSTRACT:
The bit density of stored information in a read-only memory (ROM) can be substantially increased by increasing the number of bits which can be stored in each memory cell. This can be accomplished without increasing the size or complexity of the memory cell by having the read only memory capacity stored in each memory cell as one of a multiple number of discrete states achievable by the cell. In a semiconductor chip this can be accomplished by having the semiconductor element, such as a transistor, capable of assuming one of a multiple of parametric values or states. For example, as described herein, impedance or cell width of a semiconductor transistor can be varied to assume one of four different states. The state assigned to a selected memory cell is bracketed by the value of the outputs of a plurality of comparator circuits coupled thereto. The outputs of the comparator circuits are then analyzed by a logic circuit to provide the appropriate binary readout representative of the parametric state of the selected cell.

REFERENCES:
patent: 3390381 (1968-06-01), Shepard
patent: 3656117 (1972-04-01), Maley et al.
patent: 4192014 (1980-03-01), Craycraft

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multiple bit read-only memory cell and its sense amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple bit read-only memory cell and its sense amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple bit read-only memory cell and its sense amplifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1679221

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.