Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-05-31
2011-05-31
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185070, C365S185180
Reexamination Certificate
active
07952923
ABSTRACT:
A Multiple-bit per Cell (MBC) non-volatile memory apparatus, method, and system wherein a controller for writing/reading data to/from a memory array controls polarity of data by selectively inverting data words to maximize a number of bits to be programmed within (M−1) virtual pages and selectively inverts data words to minimize a number of bits to be programmed in an Mthvirtual page where M is the number of bits per cell. A corresponding polarity control flag is set when a data word is inverted. Data is selectively inverted according the corresponding polarity flag when being read from the M virtual pages. A number of the highest threshold voltage programming states in reduced. This provides tighter distribution of programmed cell threshold voltage, reduced power consumption, reduced programming time, and enhanced device reliability.
REFERENCES:
patent: 7729166 (2010-06-01), Kim et al.
Kim Jin-Ki
Petrie William
Mosaid Technologies Incorporated
Yoha Connie C
LandOfFree
Multiple bit per cell non volatile memory apparatus and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple bit per cell non volatile memory apparatus and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple bit per cell non volatile memory apparatus and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2691982