Multiple bit line voltages based on distance

Static information storage and retrieval – Floating gate – Data security

Reexamination Certificate

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Details

C365S063000, C365S230030

Reexamination Certificate

active

07551477

ABSTRACT:
An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile storage elements, a second group of bit lines in communication with the second group of non-volatile storage elements, a first set of sense modules located at a first location and connected to the first group of bit lines, and a second set of sense modules located at a second location and connected to the second group of bit lines. The first set of sense modules applies a first bit line voltage based on the bit line distance between the first set of sense modules and the first group of non-volatile storage elements. The second set of sense modules applies a second bit line voltage based on the bit line distance between the second set of sense modules and the second group of non-volatile storage elements.

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patent: 1341182 (2003-09-01), None

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