Multiple beam exposure system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250396R, H01J 3700

Patent

active

041538439

ABSTRACT:
In an improved electron beam exposure system (EBES), a demagnified image of an array (28) of illuminated apertures is focused and scanned over the surface of a resist-coated workpiece (12). A deflection unit (30) is associated with the array of apertures to provide an independent blanking capability for each of the electron beams propagated through the aperture array. Such an EBES can be operated in a faster mode than a conventional system. In addition, the electron dose delivered to each address position on the resist coating (10) can be thereby selectively controlled. Other forms of charge particles may also be used.

REFERENCES:
patent: 3491236 (1970-01-01), Newberry
patent: 3619608 (1971-11-01), Westerberg
patent: 3715580 (1973-02-01), Maekawa et al.
patent: 3736425 (1973-05-01), Chernow
patent: 3801792 (1974-04-01), Lin
patent: 3914608 (1975-10-01), Malmberg
patent: 4093964 (1978-06-01), Aughton

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