Multipinned phase charge-coupled device

Details Multipinned phase charge-coupled device Multipinned phase charge-coupled device

1989-03-10

1990-10-16

Munson, Gene M.

357 30, H01L 2978, H01L 2714, H01L 3100

Patent

active

049639528

ABSTRACT:
A back illuminated, buried channel, multiphase charge-coupled device for imaging has a photosensitive volume bounded by silicon dioxide layers on both the front and back. The dark noise generated by these interfaces with the photosensitive volume is reduced by negative bias potential pinning the front at about -6V and the back at about -0.4V. To create fixed barrier phases at the front for accumulation within each pixel comprised of multiphase gates, positive ions are implanted at one phase gate while the others are phase clocked into channel inversion. Otherwise the phase clock of at least one gate must be controlled to provide accumulation to provide a "partial-inversion" technique. The negative bias at the back may be varied to adjust the quantum efficiency of the device, thus providing electronic shuttering.

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