Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-05-20
2008-05-20
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C438S095000
Reexamination Certificate
active
07375365
ABSTRACT:
A multilevel phase-change memory, manufacture method and operating method thereof are provided. The memory includes a first phase change layer, a second phase change layer, a first heating layer formed on one surface of the first phase change layer, a second heating layer formed between the first heating layer and the second phase change layer, a first top electrode formed on another surface of the first phase change layer, a second top electrode formed on the other surface of the second phase change layer, and a bottom electrode formed on the other surface of the first heating layer corresponding to the second heating layer. Further, a substrate is provided to form the aforementioned components. The substrate may also include a transistor. The disclosed device has a multi memory state, thereby increasing the memory density, reducing the memory area and lowering the power consumption.
REFERENCES:
patent: 5920788 (1999-07-01), Reinberg
Y.N. Hwang et al., Writing Current Reduction for High-density Phase-change RAM IEDM 893-896, 2003.
A. Piroveno et al., Scaling Analysis of Phase-Change Memory IEDM pp. 669-702, 2003.
Y.H. Ha et al., An Edge Contract Type Cell for Phase Change RAM Featuring Very Low Power Consumption, Symposium on VLSI Technology Digest of Technical Papers pp. 175-176, 2003.
Birch & Stewart Kolasch & Birch, LLP
Doan Theresa T
Industrial Technology Research Institute
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