Multilevel phase change memory

Details Multilevel phase change memory Multilevel phase change memory

2009-01-06

2010-11-16

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S098000, C438S102000, C438S694000, C257S004000, C257S296000, C365S148000

Reexamination Certificate

active

07833824

ABSTRACT:
A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.

REFERENCES:
patent: 7042001 (2006-05-01), Kim et al.
patent: 2005/0112896 (2005-05-01), Hamann et al.

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