Multilevel phase change memory

Details Multilevel phase change memory Multilevel phase change memory

2005-05-05

2009-02-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S007000, C257S005000, C257S006000, C257S296000, C365S148000

Reexamination Certificate

active

07488968

ABSTRACT:
A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.

REFERENCES:
patent: 7042001 (2006-05-01), Kim et al.
patent: 2003/0052351 (2003-03-01), Xu et al.
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2005/0032319 (2005-02-01), Dodge
patent: 2005/0112896 (2005-05-01), Hamann et al.

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