Multilevel oxide as diffusion source

Details Multilevel oxide as diffusion source Multilevel oxide as diffusion source

1984-08-29

1986-08-19

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148187, 148188, H01L 21385

Patent

active

046061142

ABSTRACT:
A method of manufacture of a semiconductor device such as an MOS dynamic read/write memory cell array uses a doped multilevel oxide layer as a diffusion source to create source/drain regions and diffused interconnects. The process is thereby simplified since an ion implant ordinarily used for this purpose is avoided. The doped oxide subjected to a heat treatment for drive-in and densification, then is reflowed after contact holes are etched.

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