Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1977-07-08
1978-09-05
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
C23C 1500
Patent
active
041117751
ABSTRACT:
An improved method of constructing a metal oxide semiconductor (MOS) device having multiple layers of metal deposited by D.C. magnetron sputtering at low D.C. voltages and low substrate temperatures provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.
REFERENCES:
patent: 3804738 (1974-04-01), Lechaton et al.
F. Barson et al., "Hillock Suppression in Aluminum Thin Films", IBM Tech. Disc. Bull., vol. 13, p. 1122 (1970).
P. S. McLeod et al., "High-Rate Sputtering of Aluminum for Metallization of Integrated Circuits", J. Vac. Sci. Tech., vol. 14, pp. 263-265 (1977).
A. Aronson et al., "Inline Production Magnetron Sputtering", Vacuum, vol. 27, pp. 151-153 (1977).
Bouldin David L.
Feltner William R.
Hollis, Jr. Ben R.
Routh Donald E.
Beumer J. H.
Manning J. R.
The United States of America as represented by the Administrator
Weisstuch Aaron
Wofford, Jr. L. D.
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