Multilevel metallization for VLSI and method for forming the sam

Details Multilevel metallization for VLSI and method for forming the sam Multilevel metallization for VLSI and method for forming the sam

1990-04-05

1993-09-28

Picard, Leo P.

Electricity: conductors and insulators

Conduits, cables or conductors

Preformed panel circuit arrangement

361778, H05K 100

Patent

active

052488543

ABSTRACT:
An interlayer connection structure for an integrated circuit includes a substrate, a first level horizontal conductor formed on the substrate, an interlayer insulator formed to cover the first level conductor, a second level horizontal conductor formed on the interlayer insulator, and a vertical conductive pillar extending through the interlayer insulator for interconnecting the first level horizontal conductor and the second level horizontal conductor. The vertical conductive pillar has a side surface coplanar with a longitudinal side surface of the first level horizontal conductor at a position where the vertical conductive pillar is in electric contact with the first level horizontal conductor.

REFERENCES:
patent: 3718936 (1973-02-01), Rice, Jr.
patent: 3757028 (1973-09-01), Schlessel
patent: 4371744 (1983-02-01), Badet
patent: 4424251 (1984-01-01), Sugishita et al.
patent: 4487993 (1984-12-01), Becker
patent: 4543715 (1985-10-01), Iadarola
patent: 4601915 (1986-07-01), Allen
patent: 4614021 (1986-09-01), Hulseweh
patent: 4888665 (1989-12-01), Smith
Jarvela, R. A. and M. J. Jesrani, Wirability Enhancement, IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, p. 3624.
European Search Report.
IEEE VLSI Multilevel Interconnect Conf. 1988, Jun. 13-14, 1988, pp. 117-124, K. Haberle et al., "Multilevel Gold Metallisation".

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