Multilevel metal interconnect and method of forming the...

Details Multilevel metal interconnect and method of forming the... Multilevel metal interconnect and method of forming the...

2006-05-09

2006-05-09

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000

Reexamination Certificate

active

07042092

ABSTRACT:
The capacitance of a multilevel metal interconnect formed on a semiconductor substrate can be adjusted, and thereby optimized, to respond to signals from devices that are formed on the underlying substrate by forming capacitive structures in trenches which have been formed using the top metal layer as a mask.

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