Multilevel memory device with memory cells storing non-power...

Details Multilevel memory device with memory cells storing non-power... Multilevel memory device with memory cells storing non-power...

2005-11-15

2005-11-15

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185210, C365S185280

Reexamination Certificate

active

06965523

ABSTRACT:
According to the multilevel programming method, each memory location can be programmed at a non-binary number of levels. The bits to be stored in the two locations are divided into two sets, wherein the first set defines a number of levels higher than the non-binary number of levels. During programming, if the first set of bits to be written corresponds to a number smaller than the non-binary number of levels, the first set of bits is written in the first location and the second set of bits is written in the second location; ifit is greater than the non-binary number of levels, the first set of bits is written in the second location and the second set of bits is written in the first location. The bits of the first set in the second location are stored in different levels with respect to the bits of the second set.

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